- Conference date: 18–21 November 2008
- Location: Shah Alam, Selandor (Malaysia)
Metal‐insulator‐semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc‐C) embedded in thin films using a focused ion beam chemical vapor deposition (FIB‐CVD) system with a precursor of low energy ion and carbon source to fabricate organic thin film transistor (OTFT) memories. The crystallinity of nc‐C was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc‐C after annealed at 600 degree celcius by the sharp peak at in graphite while no peak of diamond could be seen at The AFM images showed the nc‐C dots controlled with diameter of 100 nm, 200 nm and 300 nm, respectively. The above results revealed that the nc‐C dots had sufficiently stick onto films. The characteristic of the OTFTs operated at negative gate bias shows the p‐channel enhancement behavior, and shows the most saturation behavior.
- Atomic force microscopy
- Thin film transistors
- Chemical vapor deposition
- Focused ion beam technology
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