- Conference date: 18–21 November 2008
- Location: Shah Alam, Selandor (Malaysia)
The carrier statistics for 2‐dimensional (2‐D) p‐type nanostructure was elaborated, especially for p‐MOSFET. According to the energy band diagram, the effective mass (m*) in the p‐type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in The carrier concentration in 2‐D was obtained using the calculated density of state, based on the Fermi—Dirac statistic on the order of zero In the nondegenerate regime the carrier statistic results replicate the form the Boltzmann statistics. However, the results vary in degenerate regime, which result in the presence of The results for 2‐D carrier statistic were numerically computed, and the comparison of the carrier statistic for degenerate and non‐degenerate regime is presented, along with its respective Fermi‐Dirac integral. It is also found that the density of state of hole in 2‐D p‐MOSFET is independent of the temperature.
- Electron densities of states
- Boltzmann equations
- Carrier density
- Effective mass
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