- Conference date: 25–30 September 2008
- Location: Hersonissos, Crete (Greece)
A 3D parallel Monte Carlo simulator based on the finite element method to solve the Poisson equation is presented as a tool to model the behaviour of semiconductor devices. We investigate the possibility of the reuse of the incomplete LU factorisation of the problem matrix. Furthermore, we also investigate the influence of the Krylov subspace dimension used to solve the linear system and the effect of the number of superparticles on the solving time of the linear systems. We found that with a proper selection of parameters we can save up to 20% of the simulation time.
- Monte Carlo methods
- Semiconductor devices
- Finite element methods
- Poisson's equation
- Semiconductor device modeling
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