Characteristics of high efficiency InGaP/InGaAs double junction solar cells grown on GaAs substrates
- Conference date: 9–11 June 2009
- Location: Jakarta (Indonesia)
In this paper, we report on the conversion efficiency improvement in tandem solar cells by employing metamorphic InGaAs bottom cell instead of lattice matched GaAs cell. and double junction solar cells were grown by low‐pressure metalorganic chemical vapor deposition (LP‐MOCVD) on GaAs substrates. High‐resolution transmission electron microscopy (HR‐TEM) measurement reveals the dislocation in the layer which is caused by the lattice mismatch between subcell and GaAs substrate. Conversion efficiencies of these cells were measured to be 24.37% and 25.11% (AMI.5, 1 sun, 25° C) for the and solar cells, respectively. The details about the solar cell characteristics will be discussed in the presentation.
- Solar cells
- Solar properties
- Metal organic chemical vapor deposition
- Transmission electron microscopy
- Transmission measurement
MOST READ THIS MONTH
MOST CITED THIS MONTH
Y. K. Semertzidis, M. Aoki, M. Auzinsh, V. Balakin, A. Bazhan, G. W. Bennett, R. M. Carey, P. Cushman, P. T. Debevec, A. Dudnikov, F. J. M. Farley, D. W. Hertzog, M. Iwasaki, K. Jungmann, D. Kawall, B. Khazin, I. B. Khriplovich, B. Kirk, Y. Kuno, D. M. Lazarus, L. B. Leipuner, V. Logashenko, K. R. Lynch, W. J. Marciano, R. McNabb, W. Meng, J. P. Miller, W. M. Morse, C. J. G. Onderwater, Y. F. Orlov, C. S. Ozben, R. Prigl, S. Rescia, B. L. Roberts, N. Shafer‐Ray, A. Silenko, E. J. Stephenson, K. Yoshimura and EDM Collaboration
Article metrics loading...