- Conference date: 11–15 May 2009
- Location: Albany (New York)
Beyond the 45 nm node, metal gate and high‐k will replace the poly‐ and silicon oxide‐based gate. Hence, new materials, aluminum oxide and lanthanum oxide are being developed for high‐k gate oxide and work function tuning applications. Device performance demands stringent thickness uniformity (1 to 2% 1σ) control on 300 mm wafers. However, most of the popular metrology tools are incapable of measuring these ultra‐thin (>20 Å) films, either due to lack of sensitivity or due to a strong correlation of thickness with composition or other properties. Hence thickness and composition cannot be determined independently. To satisfy these metrology and characterization needs, wavelength dispersive X‐ray fluorescence (WD‐XRF) techniques are being developed. WD‐XRF has the advantages of long term stability, good sensitivity, and robust data analysis algorithms. Its applications for the thickness and composition metrology of RF PVD aluminum oxide and lanthanum oxide ultra‐thin films with 1 to 2% relative 1σ data precision has been demonstrated.
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