The downscaling of Metal‐Oxide‐Semiconductor Field‐Effect Transistor (MOSFET) devices leads to the implementation of a high dielectric constant oxide and a metal gate to improve the electrical performances. A detailed analysis of the chemical and structural properties of the gate stack is necessary to optimize the integration scheme. Here, the use of a synchrotron source is illustrated for non destructive analysis of the gate stack. Grazing Incidence X‐Ray Diffraction (GIXRD) is performed to investigate the crystalline structure of the layers. is found to be in the monoclinic phase with no change after metal gate deposition. TiN is crystallized in the cubic phase with no variation after Poly‐Si deposition and spike anneal. HArd X‐ray PhotoElectron Spectroscopy (HAXPES) appears to be mandatory for a non destructive analysis of the buried high‐k / substrate interface. Experiments are scheduled at the ID32 beamline of the European Synchrotron Radiation Facility (ESRF) to highlight nitrogen diffusion from the metal gate towards the pedestal interfacial oxide.
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