- Conference date: 11–15 May 2009
- Location: Albany (New York)
As the MOSFET ‐based gate dielectric layer approaches its fundamental physical limits, the investigation of high‐k oxides is ongoing in order to determine which oxides can best continue the scaling of the MOSFET. and hafnium silicates are leading candidates due to their relatively large band gaps, thermal stability in proximity to Si and relatively high dielectric constants. We have used a combination of x‐ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry (SE) to measure the band offsets between the high‐k layers and the Si substrates. Shifts in band alignment that occur upon deposition of the layer and annealing of the film stack will be discussed in light of XPS spectra. Non‐destructive compositional depth profiles constructed from angle resolved XPS data will also be presented and film thicknesses determined from them will be compared to thicknesses measured by SE.
- X-ray photoelectron spectroscopy
- Dielectric thin films
- Thin films
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