Towards Routine Backside SIMS Sample Preparation for Efficient Support of Advanced IC Process Development
- Conference date: 11–15 May 2009
- Location: Albany (New York)
Backside Secondary Ion Mass Spectrometry (SIMS) profiling is a seemingly simple option to circumvent commonly observed depth resolution degradation in conventional front‐side SIMS. However, large practical barriers in backside sample preparation prohibit a wider and more routine use of backside SIMS. Here, we explore the use of dry etching instead of wet etching for removal of the residual Si‐substrate. The former process is essentially isotropic with similar etch rates for the different crystallographic orientations and highly selective towards the dense thermal oxide (BOX). This eliminates the need for high‐precision polishing of individual samples, reducing the substrate removal to a few coarse and relatively rapid polishing steps only. Moreover, etching can be performed in unattended fashion and simultaneously on multiple samples, greatly increasing volume and turn‐around time for backside sample preparation. Here we have explained the different practical aspects and demonstrated the feasibility of this novel approach for backside preparation for different front‐end (S/D contact silicide metal, high‐k metal gate) and back‐end (ECD‐Copper) of line applications. In conclusion, availability of a robust and reliable procedure for backside SIMS sample preparation with rapid turn‐around is highly beneficial for a more efficient analytical support of advanced IC process development.
- Secondary ion mass spectroscopy
- Sample handling
- Metal to metal contacts
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