- Conference date: 11–15 May 2009
- Location: Albany (New York)
We have studied spatial variations of the electronic structure of p‐n doping silicon patterns using energy filtered X‐ray Photoelectron Emission Microscope (XPEEM). Simultaneous lateral and spectroscopic information can be obtained with this direct, non‐destructive method which allows high lateral and energy resolutions. The use of synchrotron radiation allows simultaneous measurement of the work function and acquisition of spectroscopic image series at the Si 2p core‐level and valence band on highly P and N doped silicon patterns. This paper highlights the capability of XPEEM to study the variations in electronic band alignments at the native oxide/substrate interface as a function of the substrate doping level.
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