- Conference date: 28 June–3 July 2009
- Location: Nashville (Tennessee)
Molecular dynamics (MD) simulations of the interaction of planar shock waves with point defects (interstitials and vacancies, or Frenkel pairs) were performed to investigate the possibility of reduction in the number of defects in Si resulting from substantial mechanical stress behind the shock wave front. The MD shock experiments were run in Si samples containing Frenkel pairs of varying concentration and composition. The defect dynamics behind the shock wave front were studied as a function of the shock wave intensity and the crystallographic orientation of its propagation. We found that ∼12.5% of defects were healed as a result of shock compression followed by a shock recovery step which brings the compressed samples to their uncompressed state. Such an unusual application of shock compression of solids might be useful in the microelectronics industry where such defects produced by ion implantation are considered a serious obstacle towards the further size reduction of Si CMOS devices.
- Crystal defects
- Shock waves
- Molecular dynamics
- Interstitial defects
- Mechanical stress
Y. K. Semertzidis, M. Aoki, M. Auzinsh, V. Balakin, A. Bazhan, G. W. Bennett, R. M. Carey, P. Cushman, P. T. Debevec, A. Dudnikov, F. J. M. Farley, D. W. Hertzog, M. Iwasaki, K. Jungmann, D. Kawall, B. Khazin, I. B. Khriplovich, B. Kirk, Y. Kuno, D. M. Lazarus, L. B. Leipuner, V. Logashenko, K. R. Lynch, W. J. Marciano, R. McNabb, W. Meng, J. P. Miller, W. M. Morse, C. J. G. Onderwater, Y. F. Orlov, C. S. Ozben, R. Prigl, S. Rescia, B. L. Roberts, N. Shafer‐Ray, A. Silenko, E. J. Stephenson, K. Yoshimura and EDM Collaboration
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