- Conference date: 27 July–1 August 2009
- Location: Rio de Janeiro (Brazil)
Spurious solutions in eight band theory for low‐dimensional semiconductor heterostructures is a well‐known problem. In this paper we study two approaches for the removal of spurious solutions, the plane wave cutoff approach  and the approach suggested by Foreman  where the Kane parameter is changed. We show that in order to use the plane wave cutoff approach for a cylindrical symmetric system Bessel functions has to be used as the expansion basis in the radial direction. Furthermore we compare the two approaches for a InAs/GaAs conical quantum dot.
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