- Conference date: 27 July–1 August 2009
- Location: Rio de Janeiro (Brazil)
ZnO metal‐insulator‐semiconductor(MIS) and metal‐semiconductor(MES) field effect transistors with very low leakage gate currents in the range of picoampere were fabricated by pulsed‐laser deposition to study the influence of interface scattering on the lateral electronic transport. Channel mobilities were increased by successive elimination of electron‐scattering mechanisms by means of different ZnO transistor types: heteroepitaxial MISFET, MESFET and high‐electron‐mobility transistor (HEMT) on a‐sapphire substrate as well as homoepitaxial MESFET on ZnO substrate.
- Interface structure
- Field effect transistors
- Electron mobility
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Y. K. Semertzidis, M. Aoki, M. Auzinsh, V. Balakin, A. Bazhan, G. W. Bennett, R. M. Carey, P. Cushman, P. T. Debevec, A. Dudnikov, F. J. M. Farley, D. W. Hertzog, M. Iwasaki, K. Jungmann, D. Kawall, B. Khazin, I. B. Khriplovich, B. Kirk, Y. Kuno, D. M. Lazarus, L. B. Leipuner, V. Logashenko, K. R. Lynch, W. J. Marciano, R. McNabb, W. Meng, J. P. Miller, W. M. Morse, C. J. G. Onderwater, Y. F. Orlov, C. S. Ozben, R. Prigl, S. Rescia, B. L. Roberts, N. Shafer‐Ray, A. Silenko, E. J. Stephenson, K. Yoshimura and EDM Collaboration
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