A reversed spacer patterning
technology using a sacrificial layer and a chemical vapor deposition
(CVD) spacer layer has been developed, and is demonstrated to achieve sub‐50 nm structures with conventional dry etching. The minimum‐sized features are defined not by the photolithography but by the CVD film thickness. Therefore, this technology yields critical dimension (CD) variations of minimum‐sized features much smaller than that achieved by conventional optical or e‐beam lithography and has a great potential to fabricate a nanosystems for the electrical detection of biomolecular interactions.