- Conference date: 29 May–1 June 2009
- Location: Langkawi, Kedah (Malaysia)
Characterization of a metal‐oxide‐semiconductor field effect transistor incorporating dielectric pocket (DP) for suppression of short‐channel effect (SCE) is demonstrated by using numerical simulation. An analysis of different uniform body doping from to of 50 nm channel length with DP incorporated between the channel and source/drain has been done successfully. The DP has suppressed short channel effect (SCE) without the needs of decreasing the junction depth. A reduction of leakage current was obtained in MOSFET with DP without altering the drive current A very low leakage current is obtained for DP device with drain voltage of 0.1 V. Consequently, the threshold voltage is increase accordingly with the increasing of body doping. A better control of roll‐off was also demonstrated better for MOSFET with DP compare to conventional MOSFET. Thus, the incorporation of DP will enhance the electrical performance and give a very good control of the SCE for scaling the MOSFET in nanometer regime for future development of nanoelectronics product.
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