- Conference date: 7–9 December 2009
- Location: Malacca (Malaysia)
The development of efficient MQWs active regions of quaternary InAlGaN in the ultraviolet (UV) region is an engaging challenge by itself. Demonstrating lasers at such low wavelength will require resolving a number of materials, growth and device design issues. However, the quaternary AlInGaN represents a more versatile material since the bandgap and lattice constant can be independently varied. We report a quaternary AlInGaN double‐quantum wells (DQWs) UV laser diode (LDs) study by using the simulation program of Integrated System Engineering‐Technical Computer Aided Design (ISE TCAD). Advanced physical models of semiconductor properties were used. In this paper, the enhancement in the performance of AlInGaN laser diode can be achieved by optimizing the laser structure geometry design. The AlInGaN laser diodes operating parameters such as internal quantum efficiency internal loss and transparency threshold current density show effective improvements that contribute to a better performance.
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