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Characterization of AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) with Variable Thickness Channel and Substrate Type
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10.1063/1.3469739
/content/aip/proceeding/aipcp/10.1063/1.3469739
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/content/aip/proceeding/aipcp/10.1063/1.3469739
2010-07-07
2014-10-25
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229c8a00d8fe88cf152414eb5d9cd803 conferences.conference_paperzxybnytfddd
Scitation: Characterization of AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) with Variable Thickness Channel and Substrate Type
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.3469739
10.1063/1.3469739
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