- Conference date: 9–11 December 2009
- Location: Guwahati, Assam (India)
In the present work, 325 keV ions were implanted into semi‐insulating GaAs substrate with various fluences varying from to Post annealing was carried out using 5 MeV irradiation at substrate temperature of 350 °C to remove the implantation damage. The properties of as implanted and post annealed samples were measured using superconducting quantum interference device (SQUID), X‐ray diffraction and Raman scattering to characterize the structural changes. Zero‐field‐cooled (ZFC) and field‐cooled (FC) magnetization as function of temperature were recorded for sample irradiated with 5 MeV silicon ions. X‐ray diffraction study revealed the presence of magnetic phase of (GaMn)As. The sharpness of LO mode peak, after irradiation with silicon ions indicated the crystilinity of the sample. The Mn‐like mode and (MnAs) like mode were also observed.
- Ion implantation
- Ion radiation effects
- Superconducting quantum interference devices
- X-ray diffraction
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