- Conference date: 12–14 April 2010
- Location: Bad Schandau, (Germany)
Conical dark‐field (CDF) analysis in the transmission electron microscope is introduced as a suitable method for characterizing small Cu grains in advanced interconnect structures. With a proven spatial resolution in the <5 nm range, the CDF technique is not only applied for monitoring the microstructure of Cu interconnect lines during process development and control, but also for Cu grain orientation determination in conjunction with electromigration and stress‐migration experiments to study the influence of Cu microstructure on reliability‐limiting degradation processes. To obtain accurate orientation information with high lateral resolution, several challenges associated with data acquisition and subsequent data analysis have to be accomplished. Besides a well‐aligned microscope and stable measuring conditions, a suitable choice of the evaluation parameters and appropriate handling of diffraction pattern superposition are crucial for reliable Cu orientation determination.
- Cumulative distribution functions
- Data acquisition
- Data analysis
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Y. K. Semertzidis, M. Aoki, M. Auzinsh, V. Balakin, A. Bazhan, G. W. Bennett, R. M. Carey, P. Cushman, P. T. Debevec, A. Dudnikov, F. J. M. Farley, D. W. Hertzog, M. Iwasaki, K. Jungmann, D. Kawall, B. Khazin, I. B. Khriplovich, B. Kirk, Y. Kuno, D. M. Lazarus, L. B. Leipuner, V. Logashenko, K. R. Lynch, W. J. Marciano, R. McNabb, W. Meng, J. P. Miller, W. M. Morse, C. J. G. Onderwater, Y. F. Orlov, C. S. Ozben, R. Prigl, S. Rescia, B. L. Roberts, N. Shafer‐Ray, A. Silenko, E. J. Stephenson, K. Yoshimura and EDM Collaboration
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