- Conference date: 22–24 September 2010
- Location: Mumbai, (India)
In this work we study the photoabsorption process in a single electron spherical quantum dot of Si embedded in amorphous matrix. We use the effective mass approximation and the energy levels of electron are obtained assuming a spherically symmetric well with infinitely high walls. The results are presented for the energy levels and photoabsorption coefficient for the different sizes of the spherical quantum dot and for various incident photon energies.
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