ZnO Thin Film Prepared by Simple Technique as UV‐Photodetector
- Conference date: 27–30 October 2010
- Location: Damai Laut, (Malaysia)
In this paper, the Zinc (Zn) thin films were evaporated on the silicon substrate at room temperature. Then the substrates were transferred into a thermal tube furnace to form the Zinc Oxide (ZnO) thin films. This oxidation processes were carried out by two steps: 270° C for 1 h and then 400, 450, 500, 550° C for another 1.25 h. Scanning electron microscope (SEM and EDX) spectra of ZnO indicate that the ZnO thin films were obtained with surface smoothness depending on oxidation temperature. The lowest oxidation temperature produces smoother surface, whereas highest temperature produces sample with high surface roughness. Similarly the current‐voltage results showed that the photo response was sensitive with the second oxidation temperature. Further work is, therefore, needed to find an optimum oxidation temperature for optimum photo response in photo detection applications.
- Surface oxidation
- II-VI semiconductors
- Zinc oxide films
- Scanning electron microscopy
- Surface measurements
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Y. K. Semertzidis, M. Aoki, M. Auzinsh, V. Balakin, A. Bazhan, G. W. Bennett, R. M. Carey, P. Cushman, P. T. Debevec, A. Dudnikov, F. J. M. Farley, D. W. Hertzog, M. Iwasaki, K. Jungmann, D. Kawall, B. Khazin, I. B. Khriplovich, B. Kirk, Y. Kuno, D. M. Lazarus, L. B. Leipuner, V. Logashenko, K. R. Lynch, W. J. Marciano, R. McNabb, W. Meng, J. P. Miller, W. M. Morse, C. J. G. Onderwater, Y. F. Orlov, C. S. Ozben, R. Prigl, S. Rescia, B. L. Roberts, N. Shafer‐Ray, A. Silenko, E. J. Stephenson, K. Yoshimura and EDM Collaboration
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