In this work, the structural properties of the zinc oxide (ZnO)
thin film on silicon
carbide (6H‐SiC) grown by radio frequency sputtering technique are investigated thoroughly by means of X‐ray diffraction
(XRD) technique. Both conventional XRD phase analysis and rocking curve measurements are carried out in order to determine the crystalline structure and the crystalline quality of the ZnO sample. From the phase analysis, intense peaks correspond to ZnO(002), iC(006) and their multiple reflections, i.e. ZnO(004) and SiC(0012) are observed. This result suggests that the ZnO
thin film is in wurzite structure. Through the simulation of XRD rocking curve of the ZnO(002) peak, the lattice mismatch of 5.49% is obtained.