- Conference date: 1–3 December 2010
- Location: Kuala Lumpur, (Malaysia)
It has been reported that polymer resist such as PMMA (Poly(methyl methacrylate) which is a well known and commonly used polymer resist for fabrication of electronic devices can show zwitter characteristic due to over exposure to electron beam radiation. Overexposed PMMA tend to changes their molecular structure to either become negative or positive resist corresponded to electron beam irradiation doses. These characteristic was due to crosslinking and scissors of the PMMA molecular structures, but till now the understanding of crosslinking and scissors of the polymer resist molecular structure due to electron beam exposure were still unknown to researchers [2–5].Previously we have over exposed polystyrene nanospheres to various radiation sources, such as electron beam, solar radiation and laser, which is another compound that can act as polymer resist. We investigated the physical and chemical structures of the irradiated polystyrene nanospheres with FTIR analysis. It is found that the physical and chemical changes of the irradiated polystyrene were found to be corresponded with the radiation dosages. Later, combining Laser irradiation and Reactive Ion Etching manipulation, created a facile technique that we called as LARIEA NSL (Laser and Reactive Ion Etching Assisted Nanosphere Lithography) which can be a facile technique to fabricate controllable carbonaceous nanoparticles for applications such as lithographic mask, catalysts and heavy metal absorbers.
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