Fabrication and Characterization of a‐Si Micro and Nano‐Gap Structure for Electrochemical Sensor
- Conference date: 1–3 December 2010
- Location: Kuala Lumpur, (Malaysia)
The development and application of micro gap for electrochemical sensors and biomolecule detection are reviewed in this article. The preparation methods for micro‐ and nano‐gaps and their properties are discussed along with their advantages in electrochemical sensors and biomolecule detection. Biology and medicine have seen great advances in biosensors and biochips capable of characterizing and quantifying electrochemical sensor. To understand the important relationship between sensibility and nano structure, we introduce the fabrication and characterization of micro‐ and nano‐gap structures for electrochemical sensor. In this paper, two mask designs are proposed. The first is the lateral micro‐ and nano‐gap with aluminum (Al) electrode, and the second mask is for pad Al electrode pattern. Lateral micro‐gaps are introduced in the fabrication process using amorphous silicon (a‐Si) and Al as an electrode. Conventional ultraviolet lithography technique and dry etching for a‐Si layer with wet etching for Al surface processes are used to fabricate the micro‐ and nano‐gaps based on the standard complementary metal‐oxide‐semiconductor technology and characterization of its conductivity. Electrical characterization is applied using Semiconductor Parameter Analyzer, Spectrum Analyzer, current‐voltage (IV)‐capacitance‐voltage (CV) station for electrical characteristics. Conductivity, resistance, and capacitance tests are performed to characterize and verify the structure of the device, resulting in a small micro‐gap as revealed by a further IV curve result showing a current in nano amps. The characteristics of the fabricated gap are close to those of a micro‐gap, as verified by the literature.
- Electrochemical sensors
- Biomolecular structure
- Amorphous semiconductors
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