- Conference date: 25–27 October 2010
- Location: Abha, (Saudi Arabia)
The electrical characteristics have been applied to metal organic vapor Phase deposition, MOVPD‐epitaxial grow n‐Si based Schottky structure. The temperature‐dependent of the electrical characteristics of the Au/n‐Si Schottky diode in the temperature range of 30–400 K were considered. The barrier height and ideality factor of Schottky diodes were obtained. It was observed that the zero bias barrier height decreases and the ideality factor n increases with decreasing temperature. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. Further, the homogeneous barrier height is estimated from the linear relationship between temperature‐dependent experimental effective barrier heights and ideality factors. The effective Richardson constant is determined to be in good agreement with the theoretical value. The temperature‐dependent J‐V characteristics of the Au/n‐Si Schottky diode can be successfully explained on the basis of thermionic emission (TE) mechanism with the Gaussian distribution of the barrier heights.
- Schottky barriers
- Electrical properties
- Thermodynamic properties
- Statistical properties
Daniel Baumann, Mark G. Jackson, Peter Adshead, Alexandre Amblard, Amjad Ashoorioon, Nicola Bartolo, Rachel Bean, Maria Beltrán, Francesco de Bernardis, Simeon Bird, Xingang Chen, Daniel J. H. Chung, Loris Colombo, Asantha Cooray, Paolo Creminelli, Scott Dodelson, Joanna Dunkley, Cora Dvorkin, Richard Easther, Fabio Finelli, Raphael Flauger, Mark P. Hertzberg, Katherine Jones‐Smith, Shamit Kachru, Kenji Kadota, Justin Khoury, William H. Kinney, Eiichiro Komatsu, Lawrence M. Krauss, Julien Lesgourgues, Andrew Liddle, Michele Liguori, Eugene Lim, Andrei Linde, Sabino Matarrese, Harsh Mathur, Liam McAllister, Alessandro Melchiorri, Alberto Nicolis, Luca Pagano, Hiranya V. Peiris, Marco Peloso, Levon Pogosian, Elena Pierpaoli, Antonio Riotto, Uroš Seljak, Leonardo Senatore, Sarah Shandera, Eva Silverstein, Tristan Smith, Pascal Vaudrevange, Licia Verde, Ben Wandelt, David Wands, Scott Watson, Mark Wyman, Amit Yadav, Wessel Valkenburg and Matias Zaldarriaga
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