Analysis of the electrical characteristics of Schottky diode based on n‐type Si
- Conference date: 25–27 October 2010
- Location: Abha, (Saudi Arabia)
The electrical characteristics have been applied to metal organic vapor Phase deposition, MOVPD‐epitaxial grow n‐Si based Schottky structure. The temperature‐dependent of the electrical characteristics of the Au/n‐Si Schottky diode in the temperature range of 30–400 K were considered. The barrier height and ideality factor of Schottky diodes were obtained. It was observed that the zero bias barrier height decreases and the ideality factor n increases with decreasing temperature. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. Further, the homogeneous barrier height is estimated from the linear relationship between temperature‐dependent experimental effective barrier heights and ideality factors. The effective Richardson constant is determined to be in good agreement with the theoretical value. The temperature‐dependent J‐V characteristics of the Au/n‐Si Schottky diode can be successfully explained on the basis of thermionic emission (TE) mechanism with the Gaussian distribution of the barrier heights.
- Schottky barriers
- Electrical properties
- Thermodynamic properties
- Statistical properties
- Thermionic emission
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Y. K. Semertzidis , M. Aoki , M. Auzinsh , V. Balakin , A. Bazhan , G. W. Bennett , R. M. Carey , P. Cushman , P. T. Debevec , A. Dudnikov , F. J. M. Farley , D. W. Hertzog , M. Iwasaki , K. Jungmann , D. Kawall , B. Khazin , I. B. Khriplovich , B. Kirk , Y. Kuno , D. M. Lazarus , L. B. Leipuner , V. Logashenko , K. R. Lynch , W. J. Marciano , R. McNabb , W. Meng , J. P. Miller , W. M. Morse , C. J. G. Onderwater , Y. F. Orlov , C. S. Ozben , R. Prigl , S. Rescia , B. L. Roberts , N. Shafer‐Ray , A. Silenko , E. J. Stephenson , K. Yoshimura and EDM Collaboration
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