- Conference date: 23–26 February 2011
- Location: Chandigarh (India)
High quality ZnO:Al (AZO) films have been obtained by our novel fabrication method utilizing solid‐phase crystallized (SPC) seed layers. The crystal grain size of AZO films with seed layers is 5 times larger than that of conventional films, which is due to the low nuclei density of seed layers. As a result, the resistivity of AZO films of 18 nm in total film thickness is drastically reduced from for the conventional films to for our films. No differences in transparency hve been observed between AZO films with and without seed layers and their optical transmittance is higher than 80% in a wide wavelength range of 400–2500 nm. These results reveal that our method is very promising for fabrication of transparent conducting oxide films. Our method opens up a new avenue for oxide fabrications of nm thick films with excellent crystallinity, because it can be easily extended to other oxides whose amorphous phase is difficult to obtain.
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