- Conference date: 25–30 July 2010
- Location: Seoul, (Korea)
A six‐fold enhancement of infrared photoluminescence from thick single crystal Cr:ZnSe under electrical excitation is reported. The baseline 2–3 μm photoluminescence signal is obtained under a charge‐transfer band optical seeding. The electrically enhanced infrared signal is localized under a semi‐transparent cathode and is shown to be likely related to hole concentration. The various mechanisms of excitation involved in this infrared light emission will be discussed.
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