- Conference date: 1–5 August 2011
- Location: Blacksburg (USA)
A large Rashba splitting enhanced by an in‐plane magnetic field is observed in non‐magnetic InGaAs/GaAsSb/InGaAs resonant tunneling diodes over a wide range of temperatures. The current resonances split by the Rashba effect reveal peak to valley ratios up to 2.5:1, the energy spacing between the split peaks reaches values up to 30 meV at The observed peak splitting is robust and can be observed at temperatures as high as The largest Rashba parameter determined from the split peak positions is This value is consistent with literature values reported for InGaAs based devices.
MOST READ THIS MONTH
MOST CITED THIS MONTH
Article metrics loading...