- Conference date: 10-14 January 1993
- Location: Albuquerque, NM, USA
The p‐type silicon germanium alloys produced for space power applications currently contain 0.25 atom % boron. Recent experiments with p‐type Si0.8 Ge 0.2 suggests that this value is below the optimum dopant concentration. In the present work we have prepared p‐type material with 1.3 atom% B and have characterized its thermoelectric properties over the range 300–1000 °C. When compared with the previously reported results for small scale experimental pressings, the vacuum‐casting and hot‐pressing technique employed to preparing a production scale compact results in substantially higher carrier concentrations for a given amount of boron added to the melt. The samples prepared in this work were overdoped, but can be annealed to improve the power factor over the 0.25 atom% B material. For this method of synthesis, a boron concentration of about 0.6 atom % is recommended.
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