A cryogenic class‐E RF power amplifier
- Conference date: 1992
- Location: Buffalo, New York (USA)
The high‐temperature superconductor research community and industry needs low‐cost applications for their devices in order to prosper. Low frequency (60 Hz) and RF power conversion could become one promising field for the use of HTS devices on a large scale. A 1–1.5 kilowatt Class‐E power amplifier has been designed and tested at 6.8 MHz using 1000 V MOSFETs. The circuit can be operated at room temperature as well as cryogenically cooled down to 77 K. The amplifier efficiency was measured over this temperature range. It increases at low temperatures up to the range of about 99%. This efficiency can be improved even more by using HTS resonance inductors which are under development.
- High temperature superconductivity
- Temperature measurement
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