- Conference date: 29 Dec 1992 − 5 Jan 1993
- Location: Hyderabad, Andhra Pradesh (India)
High precision four terminal dc electrical resistivity (ρ) measurements are carried out on amorphous Fe75−x M x Si15B10(M = Co, Cr; 0 ≤ x ≤ 9)alloys in the temperature ranges 1.5≤T≤300 K and 77≤T≤400 K for Co and Cr substituted samples, respectively. For both kind of samples studied, the temperature dependence of resistivity shows a minimum (ρmin) at a temperature T min × T min value for amorphous Fe75Si15B10 alloy is 20 K and it does not get affected with Co substitution whereas it increases drastically to high temperatures with the same amount of Cr substitution. ρ shows a logarithmic temperature dependence for temperatures less than T min. Above T min , ρ shows quadratic temperature dependence. An indirect evidence for the magnetic contribution to total resistivity is presented by an elaborate resistivity data analysis.
- Electrical resistivity
- Amorphous semiconductors
- Data analysis
- Direct current power transmission
- Electric measurements
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