- Conference date: 28 Jun − 2 Jul 1993
- Location: Colorado Springs, Colorado (USA)
Photoluminescence (PL) measurements on MOVPE‐grown Ga0.52In0.48P have been made as a function of pressure up to about 4.5 GPa at 77 K. The PL peak energy show a sublinear shift up to 3.8–4.0 GPa but a weakly negative pressure shift about 4.0 GPa. The pressure coefficient of the PL peak energy obtained below 3 GPa and the maximum pressure for the observation of PL emission are found to be sensitive to substrate misorientation, reflecting the degree of ordering in this alloy system. This can be partly explained in terms of the repulsion between the Γ‐folded energy states in the CuPt‐type partially ordered structure.
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