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Pressure dependence of photoluminescence in GalnP grown on misoriented (100) GaAs by metalorganic vapor phase expitaxy
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10.1063/1.46264
/content/aip/proceeding/aipcp/10.1063/1.46264
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.46264
/content/aip/proceeding/aipcp/10.1063/1.46264
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/content/aip/proceeding/aipcp/10.1063/1.46264
1994-07-10
2014-11-26
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229c8a00d8fe88cf152414eb5d9cd803 conferences.conference_paperzxybnytfddd
Scitation: Pressure dependence of photoluminescence in GalnP grown on misoriented (100) GaAs by metalorganic vapor phase expitaxy
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.46264
10.1063/1.46264
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