- Conference date: 21–23 December 2010
- Location: Penang, Malaysia
Structure growth, fabrication, and characterization of based metal-semiconductor-metal (MSM) photodetectors grown on Si (111) substrate by plasma-assisted molecular beam epitaxy (PA-MBE) are presented. X-ray diffraction (XRD) measurements revealed that the sample I ( ) and sample II ( ) were epitaxially grown on Si substrates. Full width at half maximum (FWHM) for samples I and II were equal to 0.69 and 0.65° respectively. The Schottky barrier height and ideality factor for samples I and II were equal to 0.60, 0.67 eV and 1.29, 1.32 respectively. Maximum peak responsivity for sample I was 0.123 A/W at 305 nm and for sample II, maximum peak responsivity was 0.864 A/W at 275 nm.
- Metal semiconductor metal structures
- Molecular beam epitaxy
- X-ray diffraction
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