- Conference date: 21–23 December 2010
- Location: Penang, Malaysia
AlInGaN thin film was grown on sapphire (0001) substrate using MBE technique. Metal-semiconductor-metal (MSM) photodiode (PD) with gold contact electrodes under annealing of 400 °C for 15 minutes was fabricated. Current-Voltage (I-V) measurement revealed that Schottky barrier height (SBH) and ideality factor at the metal-semiconductor interface were 0.83 eV and 1.03, respectively. The maximum responsivity of MSM photodetector was 0.198 AW−1 at emission wavelength of 366 nm. Furthermore, the noise equivalent power (NEP) and corresponding detectivity (D*) were and , respectively. The dark current of the fabricated PD biased at 5 V was A and the cut-off wavelength was 370 nm. The results indicated that the quaternary n-AlInGaN thin film with Au Schottky contact can be regarded as one of the most promising material for optoelectronic devices due to its light detecting cut-off wavelength being tunable at 366 nm or less according to the Al mole fraction.
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