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The investigation of and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE
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10.1063/1.4732500
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/content/aip/proceeding/aipcp/10.1063/1.4732500
2012-06-29
2014-09-20
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229c8a00d8fe88cf152414eb5d9cd803 conferences.conference_paperzxybnytfddd
Scitation: The investigation of Al0.29Ga0.71N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.4732500
10.1063/1.4732500
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