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Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE
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/content/aip/proceeding/aipcp/10.1063/1.4732503
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.4732503
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/content/aip/proceeding/aipcp/10.1063/1.4732503
2012-06-29
2016-02-08

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229c8a00d8fe88cf152414eb5d9cd803 conferences.conference_paperzxybnytfddd