Finite-thickness metal-semiconductor-metal waveguide as plasmonic modulator
- Conference date: 24–26 October 2012
- Location: Bad Honnef, Germany
We analyze a finite-thickness metal-semiconductor-metal waveguide to be utilized as an ultra-compact plasmonic modulator in optoelectronic integrated circuits. The InP-based semiconductor core allows electrical control of signal propagation. We show that using thin metal layers instead of thick ones we can obtain higher effective index, which is required for high modulation speed. The ultra-compact layout and tight field confinement are the main advantages of such plasmonic modulators.
- Metal semiconductor metal structures
- Integrated circuits
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