- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
Ion Implantation processes contribute significantly to the development of power devices. In this case not smallest scale technologies are addressed, but accurate treatment of the frontside, backside and bulk material play a crucial role to guarantee for key parameters such as highest power densities and required switching behavior. Some representative examples of the development needs of high, medium and low power switching devices based on silicon technology are described and challenges for ion implantation processing are concluded.
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