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Resistive switching properties of -based ReRAM with implanted Si/Al ions
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10.1063/1.4766481
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    Affiliations:
    1 Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China and School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
    2 Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    3 Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester MA 01930, USA
    4 Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    5 Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China and School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
    6 Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    7 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
    8 Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    AIP Conf. Proc. 1496, 26 (2012); http://dx.doi.org/10.1063/1.4766481
  • Conference date: 25–29 June 2012
  • Location: Valladolid, Spain
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2012-11-06
2014-04-17
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Scitation: Resistive switching properties of HfO2 -based ReRAM with implanted Si/Al ions
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.4766481
10.1063/1.4766481
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