- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
3D Crossbar (X-Bar) memory architecture is emerging as a strong candidate to enable continuing scaling of non-volatile memories in the post 2D floating gate NAND era. One of the key elements of the X-Bar architecture is a steering element which is required for addressing individual memory cells. Metal oxide ReRAM cells allow operation in unipolar mode where the vertical PIN diode could be used as a steering element. PIN diode steering elements in the X-Bar architecture must concurrently satisfy several challenging requirements: (i) >3MA/cm2 forward current, (ii) > 105 ratio of forward to reverse current, (iii) >3V reverse breakdown voltage. All these characteristics must be achieved in sub-100nm tall diode pillars and less than 20nm in size as dictated by sub-3x 3D X-BAR stack integration requirements. In this paper we report results of the development of an ion implantation process for PIN diodes formation with the above characteristic and demonstrate its scalability down to 50nm pillar diode heights.
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