- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
Samples of nuclear detectors which represent matrices of p-i-n diodes were fabricated based on undoped gallium arsenide epitaxial layers by ion implantation technology. The detectors have a size of the active area of 0.4×0.4 and 0.9×0.9 cm2. Electrical characteristics of fabricated detectors and results of measurements of fast neutrons spectra of 241Am-Be source by the recoil protons method are discussed.
- Radiation detectors
- Electrical properties
- Electrical sensors
- Electromagnetic radiation detectors
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