Leveraging patterned ion implantation to develop high efficiency selective emitter solar cells
- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
This paper reports the benefits of using patterned ion implantation to create higher efficiency selective emitter solar cells. This doping approach uses in-situ masking to enable selective doping of the contact and field regions of the emitter in a single step. The cell efficiency benefits of implantation versus current POCl3 diffusion processes are also explained, highlighting the improved junction quality, the ability to perform single side doping and the elimination of a junction isolation step which reduces cell efficiency. The implanted selective emitter solar cell process described reduces cell cost per watt through a combination of higher cell efficiency, improved cell binning and fewer process steps. Alignment between the doped regions of the solar cell and the subsequent downstream metallization process is key to enabling this process for adoption in PV manufacturing. The benefits for process integration of the implanted process will be described including the ability to optically align to the selectively implanted contact regions without additional alignment fiducial marks on the front of the cell. Experimental data yielding cell efficiencies of >19% are shown.
- Solar cells
- Ion implantation
- P-N junctions
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Y. K. Semertzidis, M. Aoki, M. Auzinsh, V. Balakin, A. Bazhan, G. W. Bennett, R. M. Carey, P. Cushman, P. T. Debevec, A. Dudnikov, F. J. M. Farley, D. W. Hertzog, M. Iwasaki, K. Jungmann, D. Kawall, B. Khazin, I. B. Khriplovich, B. Kirk, Y. Kuno, D. M. Lazarus, L. B. Leipuner, V. Logashenko, K. R. Lynch, W. J. Marciano, R. McNabb, W. Meng, J. P. Miller, W. M. Morse, C. J. G. Onderwater, Y. F. Orlov, C. S. Ozben, R. Prigl, S. Rescia, B. L. Roberts, N. Shafer‐Ray, A. Silenko, E. J. Stephenson, K. Yoshimura and EDM Collaboration
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