- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
Comparison study of doping a 3D trench transistor structure was carried out by beam-line (BL) implant and plasma doping (PLAD) methods. Electron holography (EH) was used as a powerful characterization method to study 2D cross-sectional doping profiles of boron-based doping processes. Quantitative definitions of junction depths xj in both vertical and lateral directions can be obtained. Good correlations of 2D electron holography dopant profiles, 2D dopant profile simulations, and 1D SIMS/ARXPS impurity profiles are demonstrated. The results reveal an advantage of PLAD over BL implant: a much larger effective implant area for 3D trench bottom. It leads to a larger lateral junction depth xj(L) with a comparable vertical junction depth xj(V). It is attributed to the PLAD technology with no line of sight shadowing effect and less angle variation issues. Enhancing the dopant lateral straggle by PLAD at the trench bottom is particularly useful for non-planar device structures with low resistance buried dopant layers.
- Electron doped superconductors
- Electron holography
- Electron correlation calculations
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