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Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies
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10.1063/1.4766494
/content/aip/proceeding/aipcp/10.1063/1.4766494
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/content/aip/proceeding/aipcp/10.1063/1.4766494
2012-11-06
2014-10-24
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229c8a00d8fe88cf152414eb5d9cd803 conferences.conference_paperzxybnytfddd
Scitation: Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.4766494
10.1063/1.4766494
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