Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies
- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. implant at a dose of 8×1013cm−2 does not amorphize silicon at room temperature. When implanted at −100°C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channel rolloff characteristics. It also creates a shallower n+-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as , the cryogenic implants at −100°C enable removal of Ge preamorphization, and form more active n+-p junctions and steeper B and In halo profiles than sequences at room temperature.
- Ion implantation
- High current technology
- Statistical properties
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