- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
Cold implants become a very promising technique for ultra-shallow p-n junction formation in modern integrated circuits production. However, the physical phenomena underlying the cold implantation processes are still not quite understandable. Boron and manganese ions implants into Si, and GaAs at room and liquid nitrogen temperatures were investigated. It was discovered that the implantation at lower temperature results in the implanted profiles shift to the sample surface for boron ions implanted in Si and . Meantime, the profiles of boron ions implanted in GaAs and the manganese ions implanted in and Si almost absolutely coincide. Probable reasons for such behavior of the implanted profiles are discussed.
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