- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
Co-implantation of non-dopant species is widely used in 65nm and beyond Complementary Metal-Oxide-Semiconductor (CMOS) technology node to meet ITRS ultra shallow junction roadmap and device performance requirement. With co-implantation, non-dopant species, such as Carbon (C), Fluorine (F) and Nitrogen (N), can either suppress doping diffusion or modify material property and improve device reliability. Cold implantation with wafer pedestal cooling to near −100°C is another hot topic in CMOS manufacture recently. It has obvious benefits, such as good amorphization performance, less end of range defect, less stress relaxation especially for e-SiGe formation. In the present work, different co-implantations with nitrogen and/or carbon were investigated for advanced NMOS Lightly Doped Drain (LDD) junction formation. The co-implantation was performed under room temperature or −100°C. It was found that C or C plus N co-implantations are very effective to suppress the diffusion of halo-implanted boron. Comparing with room temperature, the cryo-implantation under −100°C can get much better amorphization and less End of Range (EOR) defects, which result in reduced junction leakage and high activation as observed on blanket wafer and device wafers.
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