- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
It is shown that Cluster Carbon implantation can be an effective process for making Si:C stressor layer, particularly due to the self-amorphization feature of cluster implantation. Carbon incorporation challenges the formation of NMOS junction structures due to the competition between carbon and dopant atoms to occupy the Si lattice sites and also excess carbon causes serious deactivation of the dopant species. This work now extends to show the effect of low temperature multiple carbon implants and laser annealing on sheet resistance (Rs), carbon substituitionality ([C]subs) and re-crystallization of Si:C layer. The results show that sheet resistance is lower for room temperature implants when compared to cold implants for any anneal condition and but the carbon substitution is slightly higher at low temperature cases. Good recrystallization with no visible defects as seen through XTEM images were observed for both RT and cold implant cases for spike annealed cases. For low temperature RTA anneals, cold implants are necessary to obtain good recrystallization.
MOST READ THIS MONTH
MOST CITED THIS MONTH
Article metrics loading...