- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
Doping of Ge with Sn atoms by ion implantation and annealing by solid phase epitaxial re-growth process was investigated as a possible way to create layers. Ion implantation was carried out at liquid nitrogen to avoid nano-void formation and three implant doses were tested: 5×1015, 1×1015 and 5×1014 at/cm2, respectively. Implant energy was set to 45 keV and implants were carried out through an 11 nm film to prevent Sn out-diffusion upon annealing. This was only partially effective. Samples were then annealed in inert atmosphere either at 350°C varying anneal time or for 100 s varying temperature from 300 to 500°C. SPER was effective to anneal damage without Sn diffusion at 350° for samples implanted at medium and low fluences whereas the 5×1015 at/cm2 samples remained with a ∼15 nm amorphous layer even when applying the highest thermal budget.
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