- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
For implant of molecular ions including fluorine atoms or for multi-implantations of F+ and other ions, fluorine depth profiles after anneal change drastically depending on implant conditions. This implies that damage formation during ion implant and defect evolution during anneal are intrinsically different between implant with B atoms and implant without B atoms.
MOST READ THIS MONTH
MOST CITED THIS MONTH
Article metrics loading...