- Conference date: 25–29 June 2012
- Location: Valladolid, Spain
Evaluation of the dopant distributions in the FinFET is an essential part of their design. Doping profiles resulted from ion implantation and diffusion in contemporary 3D FinFET structure are studied using simplified but fast simulation technology. A set of analytical formulae is presented which is computationally very efficient. A simulation program in C++, Anadope3D, has been developed to model ion implantations in FinFETs based on analytic methods. The simulator is demonstrated in an example of an SOI FinFET with physical gate length of 20nm.
MOST READ THIS MONTH
MOST CITED THIS MONTH
Article metrics loading...