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Simulation of 3D FinFET doping profiles by ion implantation
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10.1063/1.4766527
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    Affiliations:
    1 School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, UK G12 8LT, United Kingdom
    2 Gold Standard Simulations Ltd. Rankine Building, Oakfield Avenue, Glasgow, UK G12 8LT, United Kingdom
    3 School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, UK G12 8LT, United Kingdom
    4 School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, UK G12 8LT and Gold Standard Simulations Ltd. Rankine Building, Oakfield Avenue, Glasgow, UK G12 8LT, United Kingdom
    AIP Conf. Proc. 1496, 217 (2012); http://dx.doi.org/10.1063/1.4766527
  • Conference date: 25–29 June 2012
  • Location: Valladolid, Spain
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2012-11-06
2014-08-20
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Scitation: Simulation of 3D FinFET doping profiles by ion implantation
http://aip.metastore.ingenta.com/content/aip/proceeding/aipcp/10.1063/1.4766527
10.1063/1.4766527
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