- Conference date: 3–7 December 2012
- Location: Indian Institute of Technology, Bombay, Mumbai, India
Amorphous hydrogenated silicon films doped with S/Se doping were prepared by PECVD technique on corning glass substrate and conductivity was measured in the temperature range of 300-470K. The films exhibit two different transport mechanisms. In the higher temperature range (370–470 K) the conduction was found to be thermally activated type while at low temperatures (less than 370 K) it is observed to follow variable range hopping. The conductivity variations have been analyzed using MN Rule.
- Hopping transport
- Temperature measurement
- Amorphous metals
- Amorphous semiconductors
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